| PART |
Description |
Maker |
| SGA8343Z SGA8343ZPCK1 SGA8343ZPCK2 SGA8343ZPCK3 SG |
LOW NOISE, HIGH GAIN SiGe HBT
|
RF Micro Devices
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
http://
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| SGB-2233 |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology
|
RF Micro Devices
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NESG2031M05-T1-A NESG2031M05-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| HMC474MP86 HMC474MP86E HMC474MP8609 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
